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2N829 - PNP germanium epitaxial mesa transistors

Download the 2N829 datasheet PDF. This datasheet also covers the 2N828A variant, as both devices belong to the same pnp germanium epitaxial mesa transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N828A-Motorola.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Bandwldth Product (IC = 10 mAde, VCE = 1 Vile, f = 100 MHz) fT 300 400 Output CapaCitance (VCB = 10 Vde, ~ = 0) Cob - 3.5 Small Signal Current Gain (IC = 10 mAde, VCE = 1 Vde, f = 100 MHz) hfe 3 4.0 Delay Plus Rise Time (Figure 1) td + tr - 50 Storage Time (Figure 1) Fall Time (Figure 1) Charge Storage Time Constant (Figure 2) Rise Time (FiguI'e.3) Storage Time (Figure 4) ts - 33 tf - 35 TS - 14 tr - 7.0 ts - 5.0 Fall Time (Figure 4) tf - 3.