PNP Germanium Epitaxial Mesa Transistors
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N829 |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 189.52 KB |
| Description | PNP germanium epitaxial mesa transistors |
| Datasheet | 2N829 2N828A Datasheet (PDF) |
|
|
2N828 (continued) (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Omw;oC above 25·C) Total Device Dissipation at 25"C . PD 150 mW Ambient Temperature (Derate.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N827 | PNP germanium mesa transistor |
| 2N828 | PNP germanium epitaxial mesa transistor |
| 2N828A | PNP germanium epitaxial mesa transistors |
| 2N834 | NPN silicon epitaxial transistors |
| 2N835 | NPN silicon epitaxial transistors |
| 2N838 | PNP germanium epitaxial mesa transistor |
| 2N840 | NPN silicon annular transistors |
| 2N841 | NPN silicon annular transistors |
| 2N869 | PNP silicon annular transistors |
| 2N869A | PNP SIlicon Small-Signal Transistor |
