2N829 Datasheet | Motorola Semiconductor

2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Bandwldth Product (IC = 10 m Ade, VCE = 1 Vile, f = 100 MHz) f T Output Capa Citance (VCB = 10 Vde, ~ = 0) Cob - 3.5 Small Signal Current Gain (IC = 10 m Ade, VCE = 1 Vde, f = 100 MHz) hfe Delay Plus Rise Time (Figure 1) td + tr - 50 Storage Time (Figure 1) Fall Time (Figure 1) Charge Storage Time Constant (Figure 2) Rise Time (Figu I'e.3) Storage Time (Figure 4) ts - 33 tf - 35 - 14 tr - 7.0 ts - 5.0 Fall Time (Figure 4) tf - 3.0 I I Max Unit - MHz - p F -- 70 ns 50 ns 50 ns 25 ns - ns - ns - ns 2N828A...