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2N835 - NPN silicon epitaxial transistors

This page provides the datasheet information for the 2N835, a member of the 2N834 NPN silicon epitaxial transistors family.

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Datasheet Details

Part number 2N835
Manufacturer Motorola
File Size 112.12 KB
Description NPN silicon epitaxial transistors
Datasheet download datasheet 2N835 Datasheet
Additional preview pages of the 2N835 datasheet.

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Full PDF Text Transcription

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834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Total Device DisSipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB Ie PD PD PD TJ,Tstg 2N834 2N835 30 20 40 25 5.0 3.0 200 0.3 2.0 1.0 6.67 0.5 6.67 -65 to +175 Unit Vdc Vdc Vdc mAdc Watt mwflC Watt mW/oC Watt mWflC °c FIGURE 1 - TURN·ON AND TURN·OFF TIME MEASUREMENT CIRCUIT FIGURE 2 - CHARGE STORAGE TIME CONSTANT MEASUREMENT CIRCUIT 'Oo .
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