2N838 - PNP germanium epitaxial mesa transistor

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N838
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	106.62 KB
Description	PNP germanium epitaxial mesa transistor
Datasheet	2N838 Datasheet

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Part Number	Description
2N834	NPN silicon epitaxial transistors
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2N828A	PNP germanium epitaxial mesa transistors

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2N838 (GERMANIUM) " CASE 22 (TO·18) Collector connected to CBse PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage . VCB 30 Vdc VCES 30 Vdc VCEX 15 Vdc Emitter-Base Boltage Collector Current (Continuous) Junction Temperature Storage Temperature Device Dissipation @TA =250 C (Derate 2mW/oC above 250 C) VEB 2.5 Vdc Ie 100 mAdc TJ +100 °c Tstg -65 to+ 100 °c PD 1.50 mW 2.0 mW/OC FIGURE 1 - SWITCHING TIME TEST CIRCUIT Ie. = GENERATOR Z... 50!! Vee = -3V -= INPUT PULSE t, = t. 1 ns 1'1 I" INPUT PULSE WIDTH = 100 ns (5q% DUTY CYCLE) 275 !! = -IDmAdc = -3.3mAdc = +3.3mAdc SCOPE liN:=:: 1 Megn CIN :::;; 20 pF t.