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2N838 - PNP germanium epitaxial mesa transistor

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Part number 2N838
Manufacturer Motorola
File Size 106.62 KB
Description PNP germanium epitaxial mesa transistor
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2N838 (GERMANIUM) " CASE 22 (TO·18) Collector connected to CBse PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage . VCB 30 Vdc VCES 30 Vdc VCEX 15 Vdc Emitter-Base Boltage Collector Current (Continuous) Junction Temperature Storage Temperature Device Dissipation @TA =250 C (Derate 2mW/oC above 250 C) VEB 2.5 Vdc Ie 100 mAdc TJ +100 °c Tstg -65 to+ 100 °c PD 1.50 mW 2.0 mW/OC FIGURE 1 - SWITCHING TIME TEST CIRCUIT Ie. = GENERATOR Z... 50!! Vee = -3V -= INPUT PULSE t, = t. 1 ns 1'1 I" INPUT PULSE WIDTH = 100 ns (5q% DUTY CYCLE) 275 !! = -IDmAdc = -3.3mAdc = +3.3mAdc SCOPE liN:=:: 1 Megn CIN :::;; 20 pF t.
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