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2N828A - PNP germanium epitaxial mesa transistors

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2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Bandwldth Product (IC = 10 mAde, VCE = 1 Vile, f = 100 MHz) fT 300 400 Output CapaCitance (VCB = 10 Vde, ~ = 0) Cob - 3.5 Small Signal Current Gain (IC = 10 mAde, VCE = 1 Vde, f = 100 MHz) hfe 3 4.0 Delay Plus Rise Time (Figure 1) td + tr - 50 Storage Time (Figure 1) Fall Time (Figure 1) Charge Storage Time Constant (Figure 2) Rise Time (FiguI'e.3) Storage Time (Figure 4) ts - 33 tf - 35 TS - 14 tr - 7.0 ts - 5.0 Fall Time (Figure 4) tf - 3.