2N828A Description
2N828 (continued) (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Omw;oC above 25·C) Total Device Dissipation at 25"C . PD 150 mW Ambient Temperature (Derate.
- Part: 2N828A
- Manufacturer: Motorola Semiconductor
- Size: 189.52 KB
Related Motorola Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 2N828 | PNP germanium epitaxial mesa transistor |
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| 2N835 | NPN silicon epitaxial transistors |