2N828A
2N828A is PNP germanium epitaxial mesa transistors manufactured by Motorola Semiconductor.
2N828 (continued)
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
DYNAMIC.CHAI!ACTERISTICS
Symbol Min Typ
Current-Gain ....,. Bandwldth Product
(IC = 10 m Ade, VCE = 1 Vile, f = 100 MHz) f T
Output Capa Citance
(VCB = 10 Vde, ~ = 0)
Cob
- 3.5
Small Signal Current Gain
(IC = 10 m Ade, VCE = 1 Vde, f = 100 MHz) hfe
Delay Plus Rise Time (Figure 1) td + tr
- 50
Storage Time (Figure 1) Fall Time (Figure 1) Charge Storage Time Constant (Figure 2) Rise Time (Figu I'e.3) Storage Time (Figure 4) ts
- 33 tf
- 35
- 14 tr
- 7.0 ts
- 5.0
Fall Time (Figure 4) tf
- 3.0
I I Max Unit
- MHz
- p F
--
70 ns
50 ns
50 ns
25 ns
- ns
- ns
- ns
2N828A...
