2N829 Description
2N828 (continued) (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Omw;oC above 25·C) Total Device Dissipation at 25"C . PD 150 mW Ambient Temperature (Derate.
- Part: 2N829
- Manufacturer: Motorola Semiconductor
- Size: 189.52 KB
Related Motorola Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 2N827 | PNP germanium mesa transistor |
| 2N828 | PNP germanium epitaxial mesa transistor |
| 2N828A | PNP germanium epitaxial mesa transistors |
| 2N834 | NPN silicon epitaxial transistors |
| 2N835 | NPN silicon epitaxial transistors |