MGP7N60E Datasheet | Motorola Semiconductor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP7N60E/D Insulated Gate Bipolar Transistor N- Channel Enhancement- Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage- blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E- series introduces an energy efficient, ESD protected, and short circuit rugged device. - - - - - - Industry Standard TO- 220 Package High Speed: Eoff = 60 m J/A typical at 125°C High Voltage Short Circuit Capability - 10 ms minimum at 125°C, 400 V Low On- Voltage 2.0 V typical at 5.0 A, 125°C Robust High Voltage Termination ESD Protection Gate- Emitter Zener Diodes ™ Data Sheet IGBT IN TO- 220 9.0 A @ 90°C 10 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON- VOLTAGE CASE 221A- 09 TO- 220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector- Emitter Voltage Collector- Gate Voltage (RGE = 1.0 MΩ) Gate- Emitter Voltage - Continuous Collector Current - Continuous @ TC = 25°C Collector Current - Continuous @ TC = 90°C Collector Current - Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance - Junction to Case - IGBT Thermal Resistance - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6- 32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions - The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit...