| Part number | MGP7N60E |
|---|---|
| Datasheet | MGP7N60E_MotorolaInc.pdf |
| File Size | 122.09 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Insulated Gate Bipolar Transistor |
|
|
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP7N60E/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MGP7N60ED | Insulated Gate Bipolar Transistor |
| MGP11N60E | Insulated Gate Bipolar Transistor |
| MGP11N60ED | Insulated Gate Bipolar Transistor |
| MGP14N60E | Insulated Gate Bipolar Transistor |
| MGP15N38CL | Internally Clamped N-Channel IGBT |
| MGP15N43CL | Internally Clamped N-Channel IGBT |
| MGP15N60U | Insulated Gate Bipolar Transistor |
| MGP20N14CL | Internally Clamped / N-Channel IGBT |
| MGP20N35CL | SMARTDISCRETES Internally Clamped / N-Channel IGBT |
| MGP20N40CL | SMARTDISCRETES Internally Clamped / N-Channel IGBT |
