MGS13002D Datasheet | Motorola Semiconductor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS13002D/D Insulated Gate Bipolar Transistor N- Channel Enhancement- Mode Silicon Gate This IGBT contains a built- in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built- In Free Wheeling Diode Built- In Gate Protection Zener Diode Industry Standard Package (TO92 - 1.0 Watt) High Speed Eoff: Typical 6.5 m J @ IC = 0.3 A; TC = 125°C and d V/dt = 1000 V/ms - Robust High Voltage Termination - Robust Turn- Off SOA ™ Data Sheet POWERLUX IGBT 0.5 A @ 25°C 600 V - - - - CASE 029- 05 TO- 226AE TO92 (1.0 WATT) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameters Collector- Emitter Voltage Collector- Gate Voltage (RGE = 1.0 MΩ) Gate- Emitter Voltage - Continuous Collector Current - Continuous @ TC = 25°C - Continuous @ TC = 90°C - Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Symbol VCES VCGR VGES IC25 IC90 ICM PD TJ, Tstg Value 600 600 ± 15 0.5 0.3 2.0 1.0 - 55 to 150 Unit Vdc Vdc Vdc Adc Watt °C THERMAL CHARACTERISTICS Thermal Resistance - Junction to Case - IGBT - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds RθJC RθJA TL 25 125 260 °C/W °C UNCLAMPED DRAIN- TO- SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) Single Pulse Drain- to- Source Avalanche...