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MGS13002D - Insulated Gate Bipolar Transistor

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Part number MGS13002D
Manufacturer Motorola
File Size 135.55 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet MGS13002D Datasheet
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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS13002D/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built–In Free Wheeling Diode Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA C ™ Data Sheet MGS13002D POWERLUX IGBT 0.5 A @ 25°C 600 V • • • • E C G G E CASE 029–05 TO–226AE TO92 (1.
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