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MRF5P20180R6 - RF POWER FIELD EFFECT TRANSISTOR

Description

1.8 pF 100B Chip Capacitor 10 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 10 nF 200B Chip Capacitors 22 µF, 35 V Tantalum Capacitors 220 µF, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Value, P/N or DWG 100B1R8BW 100B100GW 100B6R8CW 200B103MW TAJE226M035 13668221 Manufacturer AT

Features

  • ctrum 100 10.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 38 Watts Avg.
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