Datasheet4U Logo Datasheet4U.com

MRF5P21180 - N-Channel Enhancement-Mode Lateral MOSFET

Description

30 pF Chip Capacitors 5.6 pF Chip Capacitors 10 µF Tantalum Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 22 µF Tantalum Capacitors 1.0 µF Tantalum Capacitors 10 W, 1/8 W Chip Resistors 1.0 kW, 1/8 W Chip Resistor Wear Blocks 5 x 180 x 500 mil Brass Shim Motorola Value, P/N or DWG 100B30

Features

  • 10 2140 2170 Zsource Ω 5.39.
  • j13.89 5.66.
  • j13.99 5.53.
  • j14.51 Zload Ω 3.69.
  • j10.51 3.81.
  • j10.66 3.79.
  • j11.05 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Ne.

📥 Download Datasheet

📁 Similar Datasheet

  • MRF5P21045NR1 - RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET (Freescale Semiconductor)
  • MRF5P20180HR6 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRF501 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
  • MRF502 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
  • MRF517 - NPN SILICON HIGH FREQUENCY TRANSISTOR (ASI)
  • MRF517 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
  • MRF517 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
  • MRF5174 - NPN RF POWER TRANSISTOR (ASI)
  • MRF5175 - NPN RF POWER TRANSISTOR (ASI)
  • MRF5176 - NPN SILICON RF POWER TRANSISTOR (ASI)
Other Datasheets by Motorola
  • MRF5P21240R6 - RF POWER FIELD EFFECT TRANSISTOR
  • MRF5P20180R6 - RF POWER FIELD EFFECT TRANSISTOR
  • MRF5003 - N-CHANNEL BROADBAND RF POWER FET
  • MRF5007 - N-CHANNEL BROADBAND RF POWER FET
  • MRF5007R1 - N-CHANNEL BROADBAND RF POWER FET
  • MRF5015 - N-CHANNEL BROADBAND RF POWER FET
  • MRF5035 - N-CHANNEL BROADBAND RF POWER FET
  • MRF511 - HIGH FREQUENCY TRANSISTOR

Full PDF Text Transcription

Click to expand full text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5P21180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 38 Watts Avg. Power Gain — 14 dB Efficiency — 25.5% IM3 — 37.
Published: |