* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness
MRF5S19100HSR3 Datasheet (603.98 KB)
MRF5S19100HSR3
Motorola
603.98 KB
The rf mosfet line rf power field effect transistors.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Chann.
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