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MRF5S19100HSR3 - The RF MOSFET Line RF Power Field Effect Transistors

Download the MRF5S19100HSR3 datasheet PDF. This datasheet also covers the MRF5S19100HR3 variant, as both devices belong to the same the rf mosfet line rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

Part Number 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B2R7BP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 44F3358 100B2R2BP 500X 100B0R3BP 500X D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC ATC Kemet Kem

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF5S19100HR3 MRF5S19100HSR3 1930- 1990 MHz, 22 W AVG. , 28 V 2 x N - CDMA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5S19100HR3_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF5S19130HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S19130HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S19150HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S19150HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S19060MBR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S19100HR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19130SR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19150R3 RF Power Field Effect Transistors
MRF5S19150SR3 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13.9 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 50.
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