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Motorola Electronic Components Datasheet

MTB1306 Datasheet

TMOS POWER FET

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
HDTMOS E-FET.
High Density Power FET
D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
Order this document
by MTB1306/D
MTB1306
TMOS POWER FET
75 AMPERES
30 VOLTS
RDS(on) = 0.0065 OHM
CASE 418B–03
D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp 10 ms)
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 )
Thermal Resistance — Junction–to–Case
— Junction–to–Ambient
— Junction–to–Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8from Case for 5.0 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
Value
30
30
± 20
± 20
75
59
225
150
1.2
2.5
– 55 to 150
280
0.8
62.5
50
260
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
© MMoototroorlao,lIancT. 1M99O7S Power MOSFET Transistor Device Data
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
1


Motorola Electronic Components Datasheet

MTB1306 Datasheet

TMOS POWER FET

No Preview Available !

MTB1306
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
Vdc
30 — —
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
µAdc
— — 10
— — 100
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
— — 100 nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 38 Adc)
(VGS = 5.0 Vdc, ID = 38 Adc)
VGS(th)
Vdc
1.0 1.5 2.0
RDS(on)
mW
— 5.8 6.5
— 7.4 8.5
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)
VDS(on)
Vdc
— 0.44 0.5
— — 0.38
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
gFS 15 55 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
2560
3584
pF
1305
1827
— 386 772
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc,
RG = 4.7 )
td(on)
tr
td(off)
tf
— 17 35 ns
— 170 340
— 68 136
— 145 290
Gate Charge
QT — 50 70 nC
(VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
Q1 — 8.3 —
Q2 — 25.3 —
Q3 — 17.2 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
— 0.75 1.1
— 0.64 —
Reverse Recovery Time
trr — 84 — ns
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta — 35 —
tb — 53 —
Reverse Recovery Stored Charge
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
QRR
— 0.13 —
µC
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTB1306
Description TMOS POWER FET
Maker Motorola
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MTB1306 Datasheet PDF






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