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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB1306/D
Advance Information
HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time.
MTB1306 Datasheet
