MTB1306 Datasheet - ON Semiconductor

MTB1306 Power MOSFET

MTB1306 Preferred Device Power MOSFET 75 Amps, 30 Volts, Logic Level N Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commut.

MTB1306 Features

* E (ns) 10 18 7.5 QT 15 VGS 12 5.0 9.0 Q1 2.5 Q3 0 0 10 Q2 6.0 TJ = 25°C VDS ID = 75 A 20 30 40 QG, TOTAL GATE CHARGE (nC) 50 3.0 0 60 Figure 8. Gate

* To

* Source and Drain

* To

* Source Voltage versus Total Charge VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOL

MTB1306 Datasheet (211.93 KB)