* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETs
* Avalanche Energy Specified
MTB15N06V Datasheet (270.29 KB)
MTB15N06V
270.29 KB
Power field effect transistor.
MTB15N06V
Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount
N
*Channel Enhancement
*Mode Silicon Gate.
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