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MTB15N06V Power Field Effect Transistor

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Description

MTB15N06V Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount N *Channel Enhancement *Mode Silicon Gate.

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Features

* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETs
* Avalanche Energy Specified

MTB15N06V Distributors

📁 Related Datasheet

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📌 All Tags

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