MTB150N10N3 - N-Channel Enhancement Mode Power MOSFET
MTB150N10N3 Features
* Simple drive requirement
* Small package outline
* Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.6A RDSON@VGS=4.5V, ID=1.3A 100V 1.9A 128mΩ(typ) 135mΩ(typ) Symbol MTB150N10N3 Outline SOT-23 D G：Gate S：Source D：Drain S G
