* Simple drive requirement
* Small package outline
* Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.6A RDSON@VGS=4.5V, ID=1.3A 100V 1.9A 128mΩ(typ) 135mΩ(typ) Symbol MTB150N10N3 Outline SOT-23 D G：Gate S：Source D：Drain S G
MTB150N10N3 Datasheet (343.18 KB)
MTB150N10N3
Cystech Electonics
343.18 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
100V N-Channel Enhancement Mode MOSFET
MTB150N10N3
Spec. No. : C731N3 Issued Date : 2016.12.12 Revised Date : Page No. : 1/.
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