MTB15A04DH8 Datasheet - Cystech Electonics

MTB15A04DH8 Dual N-Channel Enhancement Mode Power MOSFET

MTB15A04DH8 Features

* ID@VGS=10V, TA=70°C

* Low On Resistance RDS(ON)@VGS=10V, ID=8A

* Simple Drive Requirement

* Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A

* Fast Switching Characteristic

* Pb-free lead plating and Halogen-free package 40V 26A 16.4A 7.0A 5.6A 11.3mΩ(typ) 14.2

Datasheet Details

MTB15A04DH8

Cystech Electonics

647.02 KB

Dual n-channel enhancement mode power mosfet.

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