MTB15A04DH8 - Dual N-Channel Enhancement Mode Power MOSFET
MTB15A04DH8 Features
* ID@VGS=10V, TA=70°C
* Low On Resistance RDS(ON)@VGS=10V, ID=8A
* Simple Drive Requirement
* Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 40V 26A 16.4A 7.0A 5.6A 11.3mΩ(typ) 14.2
