* ID@VGS=10V, TA=70°C
* Low On Resistance RDS(ON)@VGS=10V, ID=8A
* Simple Drive Requirement
* Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 40V 26A 16.4A 7.0A 5.6A 11.3mΩ(typ) 14.2
MTB15A04DH8 Datasheet (647.02 KB)
MTB15A04DH8
Cystech Electonics
647.02 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C450H8 Issued Date : 2017.01.16 Revised Date : 2017.02.10 Page No. : 1/ 11
Dual N-Channel Enhancement Mode Pow.
📁 Related Datasheet
MTB15A04Q8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB150N10J3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB150N10N3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB15N06E TMOS POWER FET (Motorola)
MTB15N06V TMOS POWER FET (Motorola)
MTB15N06V Power Field Effect Transistor (ON Semiconductor)
MTB15P04FP P-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB10000 LED Lamp Arrays (Marktech Corporate)
MTB10010U NPN microwave power transistor (NXP)
MTB10062 Bi-Color LED Lamp Array (Marktech Corporate)
