MTB15A04DH8 Datasheet, Mosfet, Cystech Electonics

MTB15A04DH8 Features

  • Mosfet ID@VGS=10V, TA=70°C
  • Low On Resistance RDS(ON)@VGS=10V, ID=8A
  • Simple Drive Requirement
  • Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A
  • Fast Switchin

PDF File Details

Part number:

MTB15A04DH8

Manufacturer:

Cystech Electonics

File Size:

647.02kb

Download:

📄 Datasheet

Description:

Dual n-channel enhancement mode power mosfet.

Datasheet Preview: MTB15A04DH8 📥 Download PDF (647.02kb)
Page 2 of MTB15A04DH8 Page 3 of MTB15A04DH8

TAGS

MTB15A04DH8
Dual
N-Channel
Enhancement
Mode
Power
MOSFET
Cystech Electonics

📁 Related Datasheet

MTB15A04Q8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
CYStech Electronics Corp. Spec. No. : C055Q8 Issued Date : 2017.01.04 Revised Date : Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTB.

MTB150N10J3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
CYStech Electronics Corp. Spec. No. : C868J3 Issued Date : 2016.06.06 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB150N.

MTB150N10N3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
CYStech Electronics Corp. 100V N-Channel Enhancement Mode MOSFET MTB150N10N3 Spec. No. : C731N3 Issued Date : 2016.12.12 Revised Date : Page No. : 1/.

MTB15N06E - TMOS POWER FET (Motorola)
.

MTB15N06V - TMOS POWER FET (Motorola)
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB15N06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS.

MTB15N06V - Power Field Effect Transistor (ON Semiconductor)
MTB15N06V Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate TMOS V is a new.

MTB15P04FP - P-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
CYStech Electronics Corp. Spec. No. : C877FP Issued Date : 2015.06.29 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB15P04.

MTB10000 - LED Lamp Arrays (Marktech Corporate)
LED Lamp Ar rays Arr FEA TURES FEATURES • 10 segment LED Bar Graph Array • Solid state reliability OPT O-ELECTRICAL CHARA CTERISTICS (T a = 25°C) OPT.

MTB10010U - NPN microwave power transistor (NXP)
DISCRETE SEMICONDUCTORS DATA SHEET MTB10010U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 20 Phili.

MTB10062 - Bi-Color LED Lamp Array (Marktech Corporate)
Bi-Color LED Lamp Ar ray Arr FEA TURES FEATURES • • • • 10 segment bi-color LED Bar Graph Array Solid state reliability Hi-efficiency red and green Gr.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts