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MTB16N25E Datasheet - ON Semiconductor

MTB16N25E Designer’s™ Data Sheet TMOS E FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutatio.

MTB16N25E Datasheet (274.93 KB)

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Datasheet Details

Part number:

MTB16N25E

Manufacturer:

ON Semiconductor ↗

File Size:

274.93 KB

Description:

High energy power fet.

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