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MTB16N25E - High Energy Power FET

MTB16N25E Description

MTB16N25E Designer’s™ Data Sheet TMOS E *FET.™ High Energy Power FET D2PAK for Surface Mount N *Channel Enhancement *Mode Silicon.

MTB16N25E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

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High Energy Power FET ON Semiconductor
ON Semiconductor MTB16N25E-like datasheet