MTB30N06VL Power MOSFET

ON Semiconductor

Description

MTB30N06VL Preferred Device Power MOSFET 30 Amps, 60 Volts, Logic Level N *Channel D2PAK This Power MOSFET is designed to withstand high energy.

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Datasheet Specifications

Part number: MTB30N06VL
Manufacturer: ON Semiconductor ↗
File Size: 255.40 KB
Datasheet: MTB30N06VL-ONSemiconductor.pdf
Description: Power MOSFET

Features

* QT, TOTAL CHARGE (nC) Figure 8. Gate
* To
* Source and Drain
* To
* Source Voltage versus Total Charge VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 TJ = 25°C ID = 30 A VDD = 30 V VGS = 5 V 100 tr tf td(off) 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) Figu

Applications

* in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

MTB30N06VL Distributors

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MTB30N06VL Power MOSFET ON Semiconductor

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