MTB30N06VL Datasheet - ON Semiconductor

MTB30N06VL Power MOSFET

MTB30N06VL Preferred Device Power MOSFET 30 Amps, 60 Volts, Logic Level N Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage .

MTB30N06VL Features

* QT, TOTAL CHARGE (nC) Figure 8. Gate

* To

* Source and Drain

* To

* Source Voltage versus Total Charge VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 TJ = 25°C ID = 30 A VDD = 30 V VGS = 5 V 100 tr tf td(off) 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) Figu

MTB30N06VL-ONSemiconductor.pdf