MTB33N10E TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB33N10E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

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Datasheet Specifications

Part number: MTB33N10E
Manufacturer: Motorola
File Size: 266.16 KB
Datasheet: MTB33N10E_Motorola.pdf
Description: TMOS POWER FET

Features

* t specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed.

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

MTB33N10E Distributors

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MTB33N10E TMOS POWER FET Motorola

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