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MTB33N10E

TMOS POWER FET

MTB33N10E Features

* t specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed.

MTB33N10E Datasheet (266.16 KB)

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Datasheet Details

Part number:

MTB33N10E

Manufacturer:

Motorola

File Size:

266.16 KB

Description:

Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB33N10E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

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MTB33N10E TMOS POWER FET Motorola

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