MTB30N06VL Datasheet - Motorola

MTB30N06VL - TMOS POWER FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutatio.

MTB30N06VL Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors Features Common to TMOS V and TMOS E

* FETs

* Avalanche Energy Specified

MTB30N06VL_Motorola.pdf