* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETs
* Avalanche Energy Specified
MTB30N06VL Datasheet (262.44 KB)
MTB30N06VL
Motorola
262.44 KB
Tmos power fet.
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMO.
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