* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=24A 30V 60A 19.2A 2.5 mΩ(typ) 3.5 mΩ(typ) Symbol MTB3D0N03BH8
MTB3D0N03BH8 Datasheet (678.19 KB)
MTB3D0N03BH8
Cystech Electonics
678.19 KB
N-channel logic level enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C999H8 Issued Date : 2015.03.10 Revised Date : 2020.02.25 Page No. : 1/10 N-Channel Logic Level Enhancement Mo.
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