* present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power elect
MTB36N06E Datasheet (278.34 KB)
MTB36N06E
Motorola
278.34 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
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