* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETs
* Avalanche Energy Specified
MTB36N06V Datasheet (241.85 KB)
MTB36N06V
Motorola
241.85 KB
Tmos power fet.
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB36N06V/D
TMOS Power Field Effect Transistor D2PAK for Surface Mount
TMOS.
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