Datasheet4U Logo Datasheet4U.com

MTB30P06V TMOS POWER FET

MTB30P06V Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS.

MTB30P06V Features

* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors ™ Data Sheet V™ MTB30P06V Motorola Preferred Device P
* Channel Enhancement

📥 Download Datasheet

Preview of MTB30P06V PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MTB30P06V
Manufacturer
Motorola
File Size
247.61 KB
Datasheet
MTB30P06V_Motorola.pdf
Description
TMOS POWER FET

📁 Related Datasheet

  • MTB30N06EL - TMOS Power FET (Motorola Semiconductor)
  • MTB30N06ELT4 - TMOS Power FET (Motorola Semiconductor)
  • MTB35N04J3 - N -Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB3D0N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB3D0N03BQ8 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB3N60E - High Energy Power FET (ON Semiconductor)
  • MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
  • MTB-F000329MNHNAA-B - LCD Module (Microtips)

📌 All Tags

TMOS POWER FET Motorola
Motorola MTB30P06V-like datasheet