* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=15A 30V 19A 2
MTB3D0N03BQ8 Datasheet (431.90 KB)
MTB3D0N03BQ8
Cystech Electonics
431.90 KB
N-channel logic level enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C999Q8 Issued Date : 2015.10.20 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS.
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