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MTB3N100E TMOS POWER FET

MTB3N100E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

MTB3N100E Features

* effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit el

MTB3N100E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* F

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Datasheet Details

Part number
MTB3N100E
Manufacturer
Motorola
File Size
262.24 KB
Datasheet
MTB3N100E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB3N100E-like datasheet