* Voltage versus Total Charge VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 TJ = 25°C ID = 32 A VDD = 30 V VGS = 10 V 100 tr tf td(off) 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN
* TO
* SOURCE DI
MTB36N06V Datasheet (254.57 KB)
MTB36N06V
254.57 KB
Power mosfet.
MTB36N06V
Preferred Device
Power MOSFET 32 Amps, 60 Volts
N
*Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalan.
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