MTB36N06V Datasheet - ON Semiconductor

MTB36N06V, Power MOSFET

MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N *Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalan.

MTB36N06V-ONSemiconductor.pdf

MTB36N06V Datasheet Preview — Preview of MTB36N06V PDF

Datasheet Details

Part number:

MTB36N06V

Manufacturer:

ON Semiconductor ↗

File Size:

254.57 KB

Description:

Power MOSFET

Features

* Voltage versus Total Charge VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 TJ = 25°C ID = 32 A VDD = 30 V VGS = 10 V 100 tr tf td(off) 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN
* TO
* SOURCE DI

Applications

* in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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