MTB36N06V Datasheet - ON Semiconductor

MTB36N06V Power MOSFET

MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB36N06V Features

* Voltage versus Total Charge VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 TJ = 25°C ID = 32 A VDD = 30 V VGS = 10 V 100 tr tf td(off) 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN

* TO

* SOURCE DI

MTB36N06V Datasheet (254.57 KB)