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MTB3N60E Datasheet - ON Semiconductor

MTB3N60E-ONSemiconductor.pdf

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Datasheet Details

Part number:

MTB3N60E

Manufacturer:

ON Semiconductor ↗

File Size:

137.47 KB

Description:

High energy power fet.

MTB3N60E, High Energy Power FET

MTB3N60E Product Preview TMOS E FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other indu

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