Datasheet Specifications
- Part number
- MTB3N60E
- Manufacturer
- ON Semiconductor ↗
- File Size
- 137.47 KB
- Datasheet
- MTB3N60E-ONSemiconductor.pdf
- Description
- High Energy Power FET
Description
MTB3N60E Product Preview TMOS E *FET.™ High Energy Power FET D2PAK for Surface Mount N *Channel Enhancement *Mode Silicon Gate Th.
Applications
* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.MTB3N60E Distributors
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