* ing speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which ap
MTB3N120E Datasheet (322.18 KB)
MTB3N120E
Motorola
322.18 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N120E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.
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