MTB3N120E - TMOS POWER FET

Motorola

Datasheet Details

ing speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2800 2400 C,.

📁 MTB3N120E Similar Datasheet

MTB30N06EL - TMOS Power FET (Motorola Semiconductor)
MTB30N06ELT4 - TMOS Power FET (Motorola Semiconductor)
MTB35N04J3 - N -Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB36N06V - Power MOSFET (ON Semiconductor)
MTB3D0N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB3D0N03BQ8 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
MTB-F000329MNHNAA-B - LCD Module (Microtips)

Other Datasheets by Motorola

Published: Sep 13, 2005 |