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MTB3N120E TMOS POWER FET

MTB3N120E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N120E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

MTB3N120E Features

* ing speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which ap

MTB3N120E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* F

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Datasheet Details

Part number
MTB3N120E
Manufacturer
Motorola
File Size
322.18 KB
Datasheet
MTB3N120E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB3N120E-like datasheet