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MTB3N60E Datasheet - Motorola

MTB3N60E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N60E/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching application.

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Datasheet Details

Part number:

MTB3N60E

Manufacturer:

Motorola

File Size:

74.47 KB

Description:

Tmos power fet.

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MTB3N60E MTB3N60E TMOS POWER FET Motorola

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