MTB23P06V Power MOSFET

ON Semiconductor

Description

MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P *Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalan.

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Datasheet Specifications

Part number: MTB23P06V
Manufacturer: ON Semiconductor ↗
File Size: 254.08 KB
Datasheet: MTB23P06V-ONSemiconductor.pdf
Description: Power MOSFET

Features

* 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate
* To
* Source and Drain
* To
* Source Voltage versus Total Charge VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns) 1000 100 10 TJ = 25°C ID = 23 A VDD = 30 V VGS = 10 V tr tf td(off) td(on)

Applications

* in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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MTB23P06V Power MOSFET ON Semiconductor

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