MTB23P06V Datasheet (ON Semiconductor)

MTB23P06V, Power MOSFET

MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB23P06V Features

* 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate

* To

* Source and Drain

* To

* Source Voltage versus Total Charge VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns) 1000 100 10 TJ = 25°C ID = 23 A VDD = 30 V VGS = 10 V tr tf td(off) td(on)