Datasheet Details
- Part number
- MTB23P06V
- Manufacturer
- ON Semiconductor ↗
- File Size
- 254.08 KB
- Datasheet
- MTB23P06V-ONSemiconductor.pdf
- Description
- Power MOSFET
MTB23P06V Description
MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P *Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalan.
MTB23P06V Features
* 15 20 25 30 35 40
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate
* To
* Source and Drain
* To
* Source Voltage versus Total Charge
VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS)
t, TIME (ns)
1000 100 10
TJ = 25°C ID = 23 A VDD = 30 V VGS = 10 V
tr
tf
td(off)
td(on)
MTB23P06V Applications
* in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified
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