* dds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the
MTB3N100E Datasheet (276.02 KB)
MTB3N100E
276.02 KB
High energy power fet.
MTB3N100E
Designer’s™ Data Sheet
TMOS E
*FET.™
High Energy Power FET D2PAK for Surface Mount
N
*Channel Enhancement
*Mode Sili.
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