Datasheet Specifications
- Part number
- MTB3N100E
- Manufacturer
- ON Semiconductor ↗
- File Size
- 276.02 KB
- Datasheet
- MTB3N100E-ONSemiconductor.pdf
- Description
- High Energy Power FET
Description
MTB3N100E Designer’s™ Data Sheet TMOS E *FET.™ High Energy Power FET D2PAK for Surface Mount N *Channel Enhancement *Mode Sili.
Features
* dds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If theApplications
* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageMTB3N100E Distributors
📁 Related Datasheet
📌 All Tags