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MTB3N100E - High Energy Power FET

ON Semiconductor

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Datasheet Details

Part number	MTB3N100E
Manufacturer	ON Semiconductor
File Size	276.02 KB
Description	High Energy Power FET
Datasheet	MTB3N100E-ONSemiconductor.pdf

MTB3N100E Product details

Features

dds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductanc.

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Published: Sep 17, 2016 |