d maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circ.

that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E<.

MTB16P04J3

MTB10000

MTB10010U

MTB10062

MTB100A06KRH8

MTB100A10KRH8

MTB100A10KRQ8

MTB100N10RKJ3

MTB10N40E

MTB110P08KJ3

MTB110P08KN3

MTB110P08KN6

MTB115P10KJ3