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MTB16N25E - TMOS POWER FET

MTB16N25E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

MTB16N25E Features

* resent, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electro

MTB16N25E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

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Datasheet Details

Part number
MTB16N25E
Manufacturer
Motorola
File Size
259.95 KB
Datasheet
MTB16N25E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB16N25E-like datasheet