MTB6N60E - TMOS POWER FET

Product Overview

Motorola

Part number	MTB6N60E
Manufacturer	Motorola
File Size	192.40 KB
Description	TMOS POWER FET
Datasheet	MTB6N60E Datasheet
Additional preview pages of the MTB6N60E datasheet.

versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is.

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Published: Sep 13, 2005 |