MTV10N100E - TMOS POWER FET 10 AMPERES 1000 VOLTS

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MTV10N100E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	323.36 KB
Description	TMOS POWER FET 10 AMPERES 1000 VOLTS
Datasheet	MTV10N100E Datasheet

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .

OSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used.

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