n-channel enhancement mode power mosfet.
* VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V
(Typ:6.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .
General Features
* VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V
(Typ:6.8mΩ)
* High density cell design for ult.
The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
* VDS =85V,ID =80A RDS(ON) < 8.5m.
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