NCE85H21C Datasheet - NCE Power Semiconductor

NCE85H21C - N-Channel Enhancement Mode Power MOSFET

NCE85H21C Features

* VDSS =85V,ID =210A RDS(ON) < 4mΩ @ VGS=10V

* Good stability and uniformity with high EAS

* Special process technology for high ESD capability

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Excellent package for good heat

Datasheet Details

NCE85H21C

NCE Power Semiconductor

319.70 KB

N-channel enhancement mode power mosfet.

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