NCE85H35TC - N-Channel Enhancement Mode Power MOSFET
NCE85H35TC Features
* VDSS =85V,ID =350A RDS(ON) < 2.4mΩ @ VGS=10V （Typ：1.8 mΩ）
* Good stability and uniformity with high EAS
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent packag
