n-channel enhancement mode power mosfet.
* VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V
(Typ:3.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
Pb Free Product
NCE01H16
General Features
* VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V
(Typ:3.8mΩ)
* High .
The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Pb Free Product
NCE01H16
General Features
* VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V.
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