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NCE01H16 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =100V,ID =160A RDS(ON).

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Datasheet preview – NCE01H16

Datasheet Details

Part number NCE01H16
Manufacturer NCE Power Semiconductor
File Size 324.71 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01H16 Datasheet
Additional preview pages of the NCE01H16 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE01H16 General Features ● VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.
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