p-channel enhancement mode power mosfet.
* VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V （Typ.=120mR） RDS(ON) <160mΩ @ VGS=-4.5V （Typ.=131mR）
* Super high dense cell design
* Advanced trench process .
General Features
* VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V （Typ.=120mR） RDS(ON) <160mΩ @ VGS=-4.5V （Typ.=131.
The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V （Typ.=120mR） RDS(ON) .
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