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NCE15P25JI - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-150V,ID =-25A RDS(ON).

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Datasheet Details

Part number NCE15P25JI
Manufacturer NCE Power Semiconductor
File Size 335.88 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE15P25JI Datasheet

Full PDF Text Transcription for NCE15P25JI (Reference)

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http://www.ncepower.com Pb Free Product NCE15P25JI NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to pr...

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iption The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V (Typ.=120mR) RDS(ON) <160mΩ @ VGS=-4.5V (Typ.