NCE2003 - N & P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE2003
Manufacturer	NCE Power Semiconductor
File Size	357.32 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2003-NCEPowerSemiconductor.pdf

The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V.
P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package N-channel P-channel Marking and pin Assignment Package Marking and Ordering Information SOT-23-6L top view Device Marking Device Device Package Reel Size Tape width NCE2003 NCE2003 SOT-23-6L Ø180mm.

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Published: Jun 2, 2018 |