Datasheet Details
| Part number | NCE2003 |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 357.32 KB |
| Description | N & P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE2003 Datasheet
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General Description
The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Key Features
- N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V.
- P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package N-channel P-channel Marking and pin Assignment Package Marking and Ordering Information SOT-23-6L top view Device Marking Device Device Package Reel Size Tape width NCE2003 NCE2003 SOT-23-6L Ø180mm.