NCE3060G - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE3060G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =60A RDS(ON).

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NCE3060G n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE3060G
Manufacturer	NCE Power Semiconductor
File Size	342.99 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3060G Datasheet

Full PDF Text Transcription for NCE3060G (Reference)

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http://www.ncepower.com Pb Free Product NCE3060G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3060G uses advanced trench technology and design to provid...

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tion The NCE3060G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =60A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.5 mΩ @ VGS=4.

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