NCE30D0808J - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE30D0808J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications.

Key Features

VDS = 30V,ID = 7.7A RDS(ON).

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NCE30D0808J n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE30D0808J
Manufacturer	NCE Power Semiconductor
File Size	280.71 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30D0808J Datasheet

Full PDF Text Transcription for NCE30D0808J (Reference)

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http://www.ncepower.com Pb Free Product NCE30D0808J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30D0808J uses advanced trench technology to provide exc...

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ription The NCE30D0808J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 7.7A RDS(ON) <25mΩ @ VGS=10V RDS(ON) <35mΩ @ VGS=4.

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