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NCE30P28Q - P-Channel Enhancement Mode Power MOSFET

Description

The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.

Features

  • VDS = -30V,ID = -28A RDS(ON).

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Datasheet Details

Part number NCE30P28Q
Manufacturer NCE Power Semiconductor
File Size 254.60 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30P28Q Datasheet

Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE30P28Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features ● VDS = -30V,ID = -28A RDS(ON) <12mΩ @ VGS=-10V RDS(ON) <17mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Application ● Power management ● Load switch Top View Bottom View Package Marking and Ordering Information Device Marking Device Device Package NCE30P28Q NCE30P28Q DFN3.3X3.
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