NCE30P28Q
NCE30P28Q is P-Channel Enhancement Mode Power MOSFET manufactured by NCE Power Semiconductor.
Description
The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.
General Features
- VDS = -30V,ID = -28A RDS(ON) <12mΩ @ VGS=-10V RDS(ON) <17mΩ @ VGS=-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Schematic diagram
Application
- Power management
- Load switch
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN3.3X3.3-8L
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30...