p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -28A RDS(ON) <12mΩ @ VGS=-10V RDS(ON) <17mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
* Su.
The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.
General Features
* VDS = -30V,ID = -28A RDS(ON) <12mΩ @ VGS=-10V RDS(ON) <17mΩ @ VGS=-4.5V
* Hi.
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