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NCE3134 - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE3134 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID =0.75A RDS(ON).

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Datasheet Details

Part number NCE3134
Manufacturer NCE Power Semiconductor
File Size 267.91 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3134 Datasheet

Full PDF Text Transcription for NCE3134 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE3134. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE3134 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3134 uses advanced trench technology to provide excellent R...

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ion The NCE3134 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =0.75A RDS(ON) <380mΩ @ VGS=4.5V RDS(ON) < 450mΩ @ VGS=2.5V RDS(ON) < 800mΩ @ VGS=1.