• Part: NCE4606A
  • Description: N & P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 417.96 KB
Download NCE4606A Datasheet PDF
NCE Power Semiconductor
NCE4606A
Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features - N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V - P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V - High power and current handing capability - Lead free product is acquired - Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Quantity 2500 units Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TA=25℃...