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NCE4606A - N & P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width NCE4606A NCE4606A SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unle.

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Datasheet Details

Part number NCE4606A
Manufacturer NCE Power Semiconductor
File Size 417.96 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4606A Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE4606A N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.
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