n & p-channel enhancement mode power mosfet.
* N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
* High power and current handing capability .
General Features
* N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -7A RDS(O.
The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
* N-Channel VD.
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