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NCE4618SP Datasheet - NCE Power Semiconductor

NCE4618SP N-Channel Enhancement Mode Power MOSFET

The NCE4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by it.

NCE4618SP Features

* VSSS =20V,IS =6A

* 2.5V drive

* Common-drain type

* 2KV HBM Package Information

* Minimum Packing Quantity : 5,000 pcs./reel Application

* Lithium-ion battery charging and discharging switch Equivalent Circuit Marking and pin assignment CSP top view Absolute Maximum Rat

NCE4618SP-NCEPowerSemiconductor.pdf

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Datasheet Details

Part number:

NCE4618SP

Manufacturer:

NCE Power Semiconductor

File Size:

293.61 KB

Description:

N-channel enhancement mode power mosfet.

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NCE4618SP NCE4618SP N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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