NCE4606A - N & P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE4606A
Manufacturer	NCE Power Semiconductor
File Size	417.96 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE4606A-NCEPowerSemiconductor.pdf

The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V.
P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width NCE4606A NCE4606A SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unle.

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Published: Jun 2, 2018 |