datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





NCE Power Semiconductor
NCE Power Semiconductor

NCE4953 Datasheet Preview

NCE4953 Datasheet

NCE P-Channel Enhancement Mode Power MOSFET

No Preview Available !

NCE4953 pdf
http://www.ncepower.com
Pb Free Product
NCE4953
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4953 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
VDS = -30V,ID = -5.1A
RDS(ON) < 85m@ VGS=-4.5V
RDS(ON) < 53m@ VGS=-10V
D1
G1
G2
D2
S1 S2
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE4953
NCE4953
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ID
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-24V,VGS=0V
Limit
-30
±20
-5.1
-20
2.5
-55 To 150
Unit
V
V
A
A
W
50 /W
Min Typ Max Unit
-30 V
-1 μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0



NCE Power Semiconductor
NCE Power Semiconductor

NCE4953 Datasheet Preview

NCE4953 Datasheet

NCE P-Channel Enhancement Mode Power MOSFET

No Preview Available !

NCE4953 pdf
http://www.ncepower.com
Pb Free Product
NCE4953
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
IGSS VGS=±20V,VDS=0V
±100
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-5.1A
VGS=-4.5V, ID=-4.2A
VDS=-15V,ID=-4.5A
-1 -3 V
53 m
85 m
47
S
Clss
Coss
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
1040
420
150
PF
PF
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6
VDS=-15V,ID=-5.1A,VGS=-10V
15
13
58
21
12
2.2
3
nS
nS
nS
nS
nC
nC
nC
VSD VGS=0V,IS=-1.7A
-1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE4953
Description NCE P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
PDF Download
NCE4953 pdf
NCE4953 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 NCE4953 NCE P-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE Power Semiconductor
NCE4953 pdf
2 NCE4953A NCE P-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE Power Semiconductor
NCE4953A pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy