NCE4953 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -5.1A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V
Only
* High Power and current handing capability
* Lead free product is acquir.
D1
D2
G1
G2
S1
S2
Schematic diagram
General Features
* VDS = -30V,ID = -5.1A RDS(ON) < 90mΩ @ VGS=-4.5V RD.
The NCE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
D1
D2
G1
G2
S1
S2
Schematic dia.
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