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NCE4963 - P-Channel Enhancement Mode Power MOSFET

Description

The NCE4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Only UseMarking and pin assignment.

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Datasheet Details

Part number NCE4963
Manufacturer NCE Power Semiconductor
File Size 802.06 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4963 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com NCE4963 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 D2 G1 G2 S1 S2 Schematic diagram General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.
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