* VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V (Typ:10mΩ) (Typ:14mΩ) Schematic diagram
* High density cell design for ultra low Rdson

General Features
* VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V (Typ:10mΩ) (Typ:14mΩ) Sche.

The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V.

NCE60ND18G

NCE60NF055

NCE60NP2012K

NCE6003

NCE6003M

NCE6003X

NCE6003XY

NCE6003Y

NCE6005AR

NCE6005AS

NCE6005R

NCE6005S

NCE6007S